| PART |
Description |
Maker |
| IKD06N60RF IKD06N60RF-14 |
IGBT with integrated diode in packages offering space saving advantage
|
Infineon Technologies A...
|
| IXSH30N60U1 IXSH30N60AU1 |
From old datasheet system
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| BUP305 BUP305D Q67040-A4225-A2 BUP305-D |
IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH10N100U1 IXGH10N100AU1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| APT20GN60SG APT20GN60BG |
NPT IGBT & Trench IGBT
IGBT w/ anti-parallel diode
|
Microsemi
|
| MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG50J906E |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| IXGH32N60AU1S IXGH32N60AU1 |
HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.9V??iPerFAST缁????????浣??(甯?????锛?
HiPerFAST IGBT with Diode Combi Pack
|
IXYS[IXYS Corporation]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SK |
Fast S-IGBT in NPT-Technology with An...
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
